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SiC薄膜的热辐射特性研究 被引量：3

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摘要 计算了不同厚度的碳化硅(SiC)薄膜的吸收率,发现厚度在几十至100μm、上下表面平行的碳SiC薄膜的热辐射具有良好的干涉性质.由于SiC独特的光学性质,薄膜对10μm的入射波吸收率达到0.98,接近黑体的吸收率;而对于10.5至12.4μm波段的热辐射,又几乎变得不吸收.计算还表明,SiC薄膜的半球发射率跟温度有关,在300至500K之间,半球发射率比较高.
作者 韩茂华 梁新刚 黄勇
机构地区 清华大学航天航空学院
出处 《科学通报》 EI CAS CSCD 北大核心 2005年第6期588-591,共4页 Chinese Science Bulletin
关键词 SIC薄膜 热辐射 特性研究 吸收率 光学性质 发射率 碳化硅 入射波 厚度 计算 半球
分类号 O484.4 [理学—固体物理]
  • 相关文献

参考文献15

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共引文献1

同被引文献24

  • 1马李,孙跃,赫晓东,李垚.电子束物理气相沉积工艺制备超薄高温结构材料的研究[J].材料导报,2006,20(11):100-103. 被引量：13
  • 2曹云建,文光俊,吴凯敏,徐新河.一种新型负折射率微波媒质的设计与仿真模拟[J].科学通报,2006,51(22):2612-2617. 被引量：1
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科学通报
2005年 第6期

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