摘要
本文报道了用PECVD法制备硅化钛膜,经750℃、30min退火后,最低电阻率达23.8μΩ·cm。经AES分析表明,退火后硅和钛的组分比为2:1。x射线衍射分析表明,该膜是稳定的TiSi_2结构。
In this paper, the formation of TiSi_2 films by PECVD method is reported. The lowest resistivities, after 30 min annealing at 750℃, are 23.8μΩ-cm. AES analysis show that the component ratio of silicon and titanium is 2:1 after annealing. XRD analysis show that this films are stead TiSi_2 structure.
出处
《微电子学与计算机》
CSCD
北大核心
1989年第4期4-5,共2页
Microelectronics & Computer
