PECVD硅化钛的淀积和性质

The Deposition and properties of PECVD Titanim Silicide Thin Films

采用PECVD方法刚淀积出的TiSi_x薄膜,x在0.9～2之间,电阻率大于100μΩ·cm;经650℃以上的高温退火,x变为2,电阻率降至20μΩ·cm左右。采用RBS、AES和XRD等测量方法来分析薄膜的性质。刚淀积的TiSi_x是非晶或微晶结构,退火后存在两种TiSi_2多晶结构。

Titanim silicide thin films have been prepared by PECVD. The reactants are SiH_4 and TiCl_4. The Si/Ti ratios of as-deposited TiSi_x thin films are between 0.9 to 2. The resistances of as-deposited films are larger than 100μΩ-cm. After high temperature (>650℃) anneaing, Si/Ti ratios change to t and the resistances decrease to about 20 μΩ. Analysis of the films compositions and structures have been performed by RBS, AES and XRD. The structures of as-deposited TiSi_2 thin films are amorphous. After annealing, the TiSi_2 films have two Kinds of polycrystalline structures.