摘要
本文报道研制成功的一种开漏工作的200V MOS高压集成电路,并对高压NMOSFET的器件结构及N^-漂移区注入剂量进行了优化。该电路可用于自动控制的转换接口及平板显示驱动。工艺与常规低压N阱CMOS工艺兼客。
A 200V MOS high voltage integrated circuit (HVIC) of opened drain opration has been developed. The device structure of high voltage NMOSFET and the ion-implanted dose of Ndrift region have been optimized. This circuit can be used as interface circuit of automation control and drive circuit of flat-panef display. The production ptocess is compatible with routine low voltage N-well CMOS process. The process is simple and practical.
出处
《微电子学与计算机》
CSCD
北大核心
1989年第4期1-3,共3页
Microelectronics & Computer
