介质膜在线应力及热应力的测量

The Measurement of In-Situ Stresses and Thermal Stresses

本文描述一种测量介质膜生长过程中的应力的方法。测量结果表明:硅片在850～920℃热氧化时,二氧化硅膜中的压应力为3.4～2.1×10~9dyn/cm^2,应力随氧化温度的升高而降低。这种方法也可用于测量介质膜的热应力及热膨胀系数,测得LPCVD氮化硅在800～900℃范围内的平均热膨胀系数为4.3×10^(-6)/℃。

A method for measuring in-situ stresses is presented in this paper.The results show that corresponding to the oxidation temperature from 850～925℃, the compresive stress in SiO_2 film is 3.4～2.1×10~9dyn/cm^2. This method can also measure thermal stress and thermal expense coefficiency of dielectric films.The thermal expense coefficiency of LPCVD SI_3N_4 is 4.3×10^(-6)/℃ in the range of 800～950℃.