摘要
本文报道了一种容量大、均匀性好、辐射损伤小的新型等离子体刻蚀、去胶机的研制。
A new-designed plasma-etching equipment is described in this paper. Its advantages are; high throughput,good uniformity and low highfrequeney-damage.
出处
《微电子学与计算机》
CSCD
北大核心
1989年第6期16-17,共2页
Microelectronics & Computer
