光刻胶上的PECVD二氧化硅

PECVD SiO_2 On Resist Films

本文报道了利用自设计的PECVD系统成功地在光刻胶上淀积SiO_2,满足了在微细加工技术的三层胶工艺中对中间介质层的要求。淀积温度为200～280℃,反应气体是SiH_4—N_2O体系。

This paper deseribes PECVD SiO_2 experiment on resist films.The deposited SiO_2 filme serves as the middle layer in trilayet resist process used in hight resolution.lithography. The tomperture is 200～280℃ & The reactive gases are SiH_4 and N_2O for the PECVD SiO_2 process.