功率MOSFET抗辐照性能初探

Study of Radiation Hardened Characteristcs on Power MOSFET

本文报导了近年来发展较为突出的功率场效应器件VDMOSFET的辐射效应以及国内外VDMOSFET的抗辐照特性,最后给出了该器件的基本设计原则和加同工艺技术。

This paper reports the radiation effects on, VDMOSFET, power field effects device specially developed in recent years, as well as the radiation hardened characteristics. Finally, basic design principle and radiation harded technology on this device are presented.