摘要
介绍了二次离子发射的局部热平衡（LTE）模型的发展过程及其在GaAs样品SIMS定量分析中的应用，并尝试了用GaAs基体元素作内标的定量分析方法，取得了较好的结果。
The local thermal equilibrium model of secondary ion emission and it's development as well as the application of the LTE model in GaAs quantitative analysis have been introduced. A quantitative analysis using GaAs's matrix elements Ga and As as internal standards has been attempted, a satisfactory result has been obtained.
出处
《真空科学与技术》
CSCD
1994年第2期107-113,共7页
Vacuum Science and Technology
关键词
二次离子发射
LTE
砷化镓
Secondary ion emission, Local thermal equilibrium model, Quantitative analysis
