摘要
用光电子能源谱技术(XPS和UPS)研究了金属Cs和Na与GaAs(100)的界面形成。实验结果表明,Cs和Na吸附在GaAs(100)表面时,衬底As向外扩散,形成混合相。在Na吸附的表面,As扩散程度比Cs吸附的表面大。随着复盖层厚度增加,吸附层开始金属化。
The interfacial reaction between alkali metals Cs, Na and GaAs (100) surface was studied by XPS and UPS. The experimental results show that, while Cs and Na adsorbed on GaAs (100) surface,As outdiffussed and the intermixing region was found. At the Na/GaAs(100) interface, the As outdiffu sion is more easily than at the Cs/GaAs (100). With increasing the coverage of alkali metals, adsorbed lay er starts to be metallizing.
出处
《真空科学与技术》
CSCD
1994年第3期206-209,共4页
Vacuum Science and Technology
基金
自然科学基金
关键词
碱金属
界面
砷化镓
光电子谱
Alkali metal, Semiconductor,Interface, Photoemission spectrum