磁控溅射Ti－N膜沉积的空间分布研究

Spatial Distribution of Ti-N Film under Reactively Magnetron Sputtering

磁控溅射镀膜设备可以广泛用于镀膜Ｔｉ－Ｎ膜．从实用观点看，磁控溅射工艺中的溅射速率和溅射原子空间分布是被广泛关心的．沉积在试样表面的溅射原子被认为除了与等离子体的参数有关，还与靶──工件的几何分布有关系．本文研究了真空室中Ｔｉ－Ｎ膜沉积的空间分布．在研究中十分值得注意的是溅射量与沉积量作为两个不同的概念严格区分．

Abstract Magnetron sputtering devices are used primarily for Ti-N film deposition. From a practical POint of view,the rate of deposition and spatial distribution of the sputtered atoms are of interest for the use of magnetron sputtering process.The quantity of sputtered atoms on the sample surface has been found to be generally depended on the particular geometrical arrangment of the cathode-substrate system,as well as the operating parameters of the discharge.In this paper the spatial distributaion of Ti-N film deposition has been made in the vacuum chamber.But in this research,the matter worthy of note, the quantity of sputtered atoms and the quantity of deposited atoms were to be treated as two defferent concepts.