摘要
研究反应气体（Ｏ_２）含量及基片温度对射频反应溅射ＳｉＯ_２膜光学性能及沉积速率的影响，并给出了膜层俄歇能谱分析结果。
The influence of reactive gas (O2) content and substrate temperature on the RF reactive sputtering deposited rate and optical characteristics for the SiO2 film was studied. And Angel Electron Spectroscopy analyzed result for the film layer were showed.
出处
《真空电子技术》
北大核心
1994年第3期3-6,共4页
Vacuum Electronics
关键词
射频反应溅射
薄膜
二氧化硅
RF reactive sputtering, SiO_2 film, Auger spectroscopy
