GaAs／Si衬底电路制备中Ge元素分布的研究

The Study of Element Ge Distribution in Making the Circuit of GaAs/Si Substrate

Ｓｉ衬底上外延ＧａＡｓ材料是微电子学研究的重要课题之一，本文介绍了以大直径的ＧａＡｓ／Ｓｉ材料取代ＧａＡｓ衬底的工艺技术，对Ｇｅ元素在ＧａＡｓ／Ｓｉ集成电路中的分布影响进行了俄联电子能谱分析研究，并确定了该技术在大规模集成电路中的应用价值。

The technology of using GaAs/Si material to replace GaAs substrate is introduced.The element Ge distibution GaAs/Si integrated circuit is studied by AES. The application of this technology in large scale integrated circuit is affirmed.