摘要
为了研究基片的表面状态对金刚石成核密度的影响，采用了抛光清洁的基片、对样品划痕、基片加热脱附等不同的表面处理方法，对样品表面进行预处理，得到了不同表面处理条件下的金刚石成核密度。尝试了在低真空（10－1Pa量级）条件下，去除表面的氧化硅及吸附活性的含碳原子，以提高金刚石的成被密度，得到了较理想的结果，成核密度为109／cm2。
In other to study the influence of surface state of substrate on the nucleation density of diamond,various surface treatments of the substrates have been employed, such as polishing, roughing the polished surface,chemically etching the surface and heating the substrates. The effects of different surface treatments are investigated for the nucleation density of diamond. As a result, nucleation density is increased by heating the substrate in the apparatus of low vacuum pressure 10(-1) Pa for remobing SiO2 layer and absorbing activated carbon atoms on the substrate surface. The diamond nucleation density is in the range from 108／cm2 to 109/cm2 by this surface treatment.
出处
《真空科学与技术》
CSCD
1994年第4期276-279,共4页
Vacuum Science and Technology
关键词
金刚石薄膜
成核密度
基片处理
Diamond thin film, Nucleation density,Substrate treatment, SEM
