摘要
运用直流磁控反应溅射技术在氮气和氧气气氛下，以In（90wt％）－Sn（10wt％）作为靶材，基体处于自然升温状态下沉积ITO膜。在空气中，选用200℃，250℃，300℃，350℃，400℃保温20min，对ITO膜进行退火处理。这里着重研究溅射气氛及退火条件对膜的方块电阻的影响。
In (90 wt% )-Sn (10 wt % ) metal alloy target was used to deposite ITO films by DC magnetron reactive sputtering on an unheated substrate. The films are baked for 20 minutes in the air at 200℃,250℃, 300℃, 350℃, 400℃ respectively. Dependence of sheet resistance of the films on the ratio of argon and annealing condition was investigated.
出处
《真空科学与技术》
CSCD
1994年第5期379-382,共4页
Vacuum Science and Technology
