EBD法制备ZnIn_2Te_4薄膜的性质与XPS研究

THE PROPERTIES AND XPS STUDY OF ZnIn_2Te_4 THIN FILMS BY ELECTRON BEAM DEPOSITION

用电子束加热沉积法（EBD）制备了厚度420um的ZnIn2ZTe4薄膜。研究了最佳成膜工艺条件和性能，用电子能谱（XPS）分析了ZuIn2Te4薄膜的组成、结构和状态；典型ZnIn2Te4膜最佳参数为：电阻率ρ为3．2×10－1Ω·cm，Hall迁移率是79cm2V－1s－1，载流子浓度是1．58×1017cm－3，禁带宽度（Eg）是2．33eV；探讨了ZuIn2Te4膜导电机理，制作了ZuIn2Te4－Si太阳能电池。

The ZnIn2Te4 thin films of 420 nm thickness were prepared onto glass substrates using EBD.The composition, structure and valence state of the films were investigated by XPS and X-ray diffraction. The optical and electrical properties of the ZnIn2Te4 films were discussed. It has shown that ρ=3. 2 ×10-1Ω. cm,μH = 79cm2V-1s-1,N = 1. 58 × 1017cm-3, and Eg = 2. 33eV. The heter junction ZnIn2Te4-Si solar cells have first been fabricated successfully.