两步法腐蚀硅锥阴极阵列的工艺研究

FORMING PROCESS OF SILICON CONE CATHODE ARRAY BY USING TWO-STEP ETCHING METHOD

详细研究了利用硅的各向异性腐蚀、各向同性腐蚀制备硅锥阴极阵列的工艺。采用快速腐蚀与缓蚀削尖两步工艺，制备出了均匀、尖锐的硅锥阵列。其阵列密度可达106／cm2，硅锥曲率半径可做到20nm。

A technique for the fabrication of silicon cone cathode array by using anisotropic and isotropic etching has been reported in this paper. By two-step method with rapid and buffer-sharpener etching,silicon cone array with uniformity and sharpness has been fabricated. Its density is 106/cm2,the tip curvature radius is about 20nm.