微波GaAs功率场效应晶体管烧毁机理的研究：Ⅱ．射频烧毁

Investigation of burnout mechanism in microwave GaAs power FETs:Part Ⅱ.RF hurnout

采用扫描电镜（ＳＥＭ）和扫描俄歇微探针（ＳＡＭ）对国内研制开发的微波ＧａＡｓ功率ＦＥＴ芯片在射频测试中的烧毁进行了分析研究。探讨其烧毁机理及物理过程。

Microwave GaAs power FET chips fabricated by us which appear burnout during the RF testing are investigated by means of scanning electron microscopy(SEM)and Auger microprobe(SAM).The physics procedure and mechanism of RF burnout are analyzed。