硅多条探测器的研制和初步应用

Development of Si Multi-Strip Detector

描述了用微电子工艺技术成功研制硅多条探测器的制备工艺技术及测试结果.这种探测器的灵敏面积为50mm×20mm.P掺杂面被等分成相互平行的,长度为20mm,宽度为3mm的16条,相邻条之间的间距为140μm.当探测器工作在全耗尽偏压下,每一条的反向漏电流的典型值<2nA.对239Puα粒子的能量分辨为0.5%—09%,相邻条之间的相互影响(crosstalk)为4%—8%.用于72MeV/u的C束离子测量,得到能量分辨为027%.

The technics and test results and preliminary applications of Si multi-strip detector fabricated by using microelectronic technique were described in this paper. The sensitive area of this kind of detector is 50mm × 20mm. The P side surface was divided into equal 16 strips with 140 μm spece between two strips, each one having length of 20mm and width of 3mm. A reverse leakage current less than 2nA and an energy resolution of 0.4%-0.9% (for 239Pu a particles) and a crosstalk between neighboring strips of 4%-8% have been obtained when the detector was operated in full depletion condition. An energy resolution of 0.27% was achieved for measuring of 7.2 MeV/u C ions.