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Lattice-Matched InP-Based HEMTs with T^T of 120GHz 被引量：2

截止频率为120GHz的晶格匹配InP基HEMT(英文)
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摘要 Lattice matched InP based InAlAs/InGaAs HEMTs with 120GHz cutoff frequency are reported.These devices demonstrate excellent DC characteristics:the extrinsic transconductance of 600mS/mm,the threshold voltage of -1 2V,and the maximum current density of 500mA/mm. 报道了具有良好直流特性的晶格匹配 InP基 HEMT,器件的跨导为 600mS/mm,阈值电压为-1 2V,最大电流密度为500mA/mm,截止频率为120GHz.
作者 陈立强 张海英 尹军舰 钱鹤 牛洁斌
机构地区 中国科学院微电子研究所
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第3期472-475,共4页 半导体学报（英文版）
基金 国家自然科学基金(批准号:60276021) 国家重点基础研究发展规划(批准号:G2002CB311901)资助项目~~
关键词 cutoff frequency high electron mobility transistors INALAS/INGAAS INP 截止频率 高电子迁移率场效应晶体管 InAlAs/InGaAs InP
分类号 TN386 [电子电信—物理电子学]
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参考文献8

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二级参考文献7

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共引文献6

同被引文献20

  • 1康耀辉,林罡,李拂晓.InAlAs/InGaAs/InP HEMT欧姆接触研究[J].固体电子学研究与进展,2008,28(1):145-148. 被引量：6
  • 2张胜利,孙建伟,刘宇,祝宁华.光探测器芯片的高频特性测量[J].中国激光,2004,31(7):857-860. 被引量：7
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  • 8A.Tessmann,A.Leuther,V.Hurmet al.Metamorphic HEMT MMICs and modules operating between 300and500GHz[].IEEE Journal of Solid State Circuits.2011
  • 9A.Endoh,K.Shinohara,I.Watanabe et al.Low-voltage and high-speed operations of 30-nm-gate pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs under cryogenic conditions[].IEEE Electron Device Letters.2009
  • 10R.Lai,X.B.Mei,S.Sarkozyet al.Sub 50nm InP HEMT with fT=586GHz and amplifier circuit gain at 390GHz forsub-millimeter wave applications[].ProcIEEE nd IntConfIPRM.2010

引证文献2

Journal of Semiconductors
2005年 第3期

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