摘要
利用常压MOCVD法在蓝宝石(0001)衬底上沉积了非故意掺杂 ZnO单晶薄膜.用 Van der Pauw法测量了其从15K到室温的载流子浓度和霍耳迁移率,并用双层结构单施主模型对载流子浓度和迁移率进行了拟合分析.研究表明:ZnO薄膜浅施主能级为20 4meV,温度较低时,以电离杂质散射为主,温度较高时,以极性光学波散射为主.
Single crystalline unintentionally doped ZnO films are grown on sapphire (0001) substrates by the home made atmospheric pressure metalorganic chemical vapor phase deposition (MOCVD).The carrier concentration and Hall mobility are measured by Van der Pauw Hall methods.The carrier concentration has been fitted theoretically by double layers model.The fitted results show that shallow donor energy level is about 20 4meV under the conduction band.The ionized impurity scattering has a great effect on mobility when temperature is low,and the polar optical photon scattering becomes dominant at room temperature.
基金
国家高技术研究发展计划资助项目(批准号:2003AA302160)~~
