基于MBE的f_(max)为157GHz的SiGe HBT器件

SiGe HBT with f_(max) of 157GHz Based on MBE 

在模拟集成电路的应用中,不仅注重器件 fT,而且注重晶体管最高振荡频率(fmax).文中以 MBE生长的SiGe材料为基础,进行了提高SiGe HBT器件fmax的研究,研制出了fmax=157GHz的SiGe HBT器件.

For analog IC applications,not only f T of Si transistor is concerned,but f max of Si transistors is also concerned.In this study,the research for improvement on SiGe HBT f max of 157GHz has been undertaken based on MBE SiGe materials.