摘要
对SOI LDMOS进行了建模,得到了器件各主要参数的最优值与 SOI硅膜厚度的关系式.以此为基础用专业软件Medici和Tsuprem 4对器件进行了模拟,得到了最优漂移区浓度、最优击穿电压等参数随 SOI硅膜厚度的变化曲线,这些结果对实际器件的设计以及工艺生产具有参考意义.
The SOI LDMOS is modeled.The correlations between several leading parameters and the SOI thickness are presented.The optimum impurity concentration and the maximum breakdown voltage are obtained by numerical analysis using Medici and Tsuprem 4.All these results are important for the design and fabrication of the device.
基金
国家高技术研究发展计划资助项目(批准号:2002AA1Z1550
2003AA1Z1400)~~