宽带偏振不灵敏InGa As半导体光放大器

Broad-Width Polarization Insensitive InGaAs Semiconductor Optical Amplifier 

采用压应变InGaAs量子阱和张应变InGaAs准体材料交替混合的有源结构，研制了宽带偏振不灵敏的半导体光放大器．此放大器在100-250mA的工作电流范围内，获得了大于70nm的3dB光带宽；在0～250mA工作电流和3dB光带宽波长范围内，偏振灵敏度小于1dB．对于1．55μm的信号光，在200mA的注入电流下获得了15．6dB的光纤到光纤的增益、小于0．7dB的偏振灵敏度和4．2dBm的饱和输出功率．

An active structure containing InGaAs compressive wells and tensile quai bulk layers is adopted to fabricate broadband polarization insensitive semiconductor optical amplifier.The 3dB optical bandwidth of more than 70nm is obtained ranging the driving current from 100 to 250mA,moreover,the SOA has less than 1dB polarization sensitivity over the 0～250mA injection current and 3dB optical bandwidth.For 1 55μm input signal light,15 6dB fiber to fiber gain,less than 0 7dB polarization sensitivity,and 4 2dBm saturation output power are achieved at an injection current of 200mA.