^(40)Ar^(10+)激发半导体功能材料P-Si表面的激发光谱

^(40)Ar^(10+) Incident Semiconductor Function Material of P- Si Solid Surface exciting Spectrums

报道了用ECR离子源的高电荷态离子^(40)Ar^(10+)入射到p型Si表面的实验研究,通过实验测量到的Si原子和Si^(2+)离子的200nm-1000nm光谱,研究了谱线产生的机理。实验结果表明:低速高电荷态离子与固体表面相互作用中,可有效地激发原子和离子的特征谱线,分析了这一现象和相互作用过程的发光机理。

The paper reported that the experiment results have been finished that the highly charged ion ^(40)Ar^(10+) extracted from ECRIS impacted on p-type Si solid surface creating spectrums. The spectrums in range of 200nm to1000nm have been measured that of Si. The results shown that atomic and ions characteristic spectrums of solid surface were excited effectively.