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四类LO信号对CMOS Gilbert混频器增益影响分析 被引量：1

The effect of four different kinds of LO on gain in CMOS Gilbert mixer
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摘要 本文深入研究了CMOS Gilbert混频器在四类本振信号(Local Oscillator,LO)作用下的开关模型,提出了相应情况下的混频器电压转换增益修正公式。基于0.25μm标准CMOS工艺的Gilbert混频器仿真结果表明,本文预测的电压增益理论值与仿真结果相差最大为0.08dB,对CMOS混频器的优化设计具有指导意义。 The switch behavior of CMOS Gilbert mixer is investigated with four different kinds of local oscillator (LO) signals. Four correctional equations of mixer voltage conversion gain are derived. The prediction of our analysis is compared with simulation results based on 0.25μm CMOS technology, which maxim error is less than 0.08dB, it can be used to direct the design of CMOS mixer.
作者 唐守龙 罗岚 陆生礼 时龙兴
机构地区 东南大学国家专用集成电路系统工程技术研究中心
出处 《电路与系统学报》 CSCD 北大核心 2005年第2期66-70,共5页 Journal of Circuits and Systems
关键词 CMOS射频集成电路 混频器 电压转换增益 CMOS RF IC mixer voltage conversion gain
分类号 TN773 [电子电信—电路与系统]
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参考文献6

  • 1Gilbert B. A Precise Four-Quadrant Multiplier with Subnanosecond Response [J]. IEEE JSSC, 1968-12, SC-3: 365-373.
  • 2Rofougaran A, Chang J Y C, Rofougaran M, Abidi A A. A IGHz CMOS RF Front-End IC for a Direct-Conversion Wireless Receiver [J]. IEEE JSSC, 1996-07, 31(7): 880-889.
  • 3Sullivan P J, Xavier B A, Ku W H. Low Voltage Performance of a Microwave CMOS Gilbert Cell Mixer [J]. IEEE JSSC, 1997-07, 32(7):1151-1155.
  • 4Chang Cheng-Chih, Weng Ro-Min, Huang J C, Hsu Kang, Lin Kim-Yi. A I.SV High Gain CMOS Mixer for 2.4GHz Applications [J]. IEEE ISCAS, 2001-05, 4: 782-785.
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同被引文献10

  • 1Gilbert B.A precise four-quadrant multiplier with subnanosecond response[J].IEEE JSSC,1968,SC-3:365-373.
  • 2Terrovitis M T,Meyer R G.Noise in current-commutating CMOS mixers[J].IEEE JSSC,1999,34(6):772-783.
  • 3Li Li,et al.Substrate noise analysis for RF CMOS mixers based on state equation technique.IEEE International Workshop on Design of Mixed-Mode Integrated Circuits and Applications[C].Puerto Vallarta,1999.94-97.
  • 4Chen Chih-Hung.Noise Characterization and Modeling of MOSFETS for RF IC Applications[D].Ph.D.dissertation,McMaster University,2002.
  • 5Tsivids Y P.Operating and Modeling of the MOS Transistor[M].Second Ed.McGraw-Hill,1999.
  • 6Cholten A J S,et al.Accurate thermal noise model for deepsubmicron CMOS.Proc of the International Electron Devices Meeting[C].Washington,DC,1999.155-158.
  • 7Park C H,Park Y J.Modeling of thermal noise in shortchannel MOSFETs at saturation[J].Solid-State Electronics,2000,44:2053-2057.
  • 8Knobilinger G,Kelin P,Tiebout M.A new model for thermal channel noise of deep-submicron MOSFETs and its application in RF-CMOS design[J].IEEE JSSC,2001,36(5):831 -837.
  • 9Garverick S L,Sodini C G.A simple model of scaled MOS transistors that includes field-dependent mobility[J].IEEE JSSC,1987,sc-22(1):111-114.
  • 10Behzad R.Design of Analog CMOS and Integrated Circuits[M].McGraw-Hill,2001.

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电路与系统学报
2005年 第2期

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