GaAs图形衬底上InAs量子点生长停顿的动力学蒙特卡罗模拟

Kinetic Monte Carlo Simulation of InAs Quantum Dots Growth Pause on GaAs Patterned Substrate

采用动力学蒙特卡罗模拟方法对GaAs图形衬底上自组织生长InAs量子点的停顿过程进行了研究.用衬底束缚能的表面分布模拟衬底图形,考察生长之后的停顿时间对量子点形成的影响.结果表明,合适的停顿时间使图形衬底上的量子点分布更趋规则化,对量子点的定位生长有积极的影响.

The self-organized growth of InAs quantum dots on patterned GaAs substrate,especially the influence of growth pause on the characteristics of quantum dots is studied with Kinetic Monte Carlo method.The patterned substrate is described by the distribution of surface energy.The simulation results show that an appropriate pause time tends to make the quantum dots more uniform and regular,hence facilitating site-control of quantum dots.