摘要
通过射频反应溅射法在硅衬底上制备了具有c轴择优取向和小晶格失配的In掺杂ZnO薄膜.在室温下测量样品的光致发光(PL)光谱,观察到波长位于415nm(3.02eV)和430nm(2.88eV)附近的蓝紫发光双峰.研究了不同In掺杂量对ZnO薄膜的结构和发光特性的影响.当In片面积为靶总面积的3%时,样品具有高度的c轴择优取向和较小的晶格失配(0.16%);同时在PL谱中观察到波长位于415nm(3.02eV)和433nm(2.86eV)处的强蓝紫光双峰.
Indium-doped zinc oxide films with c-axis preferred orientation and small lattice mismatch are deposited on silicon substrates by RF co-reactive sputtering.A blue-violet photoluminescent bi-peaks located at about 415nm and 430nm are observed when excited with 340nm light at room temperature.The effect of In doping on the structural and photoluminescent properties of ZnO thin films is investigated.It is found that the sample has a highly c-axis orientation and small lattice mismatch (0.16%) and a stronger blue-violet emission bi-peak at 415nm and 433nm in PL spectra when the percentage area of indium slices is 3%.
基金
甘肃省自然科学基金资助项目(批准号:ZS011A25050C)~~
