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SOI基双级RESURF二维解析模型 被引量：4

A 2D Analytical Model of SOI Double RESURF Effect
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摘要 提出了SOI基双级RESURF二维解析模型.基于二维Poisson方程,获得了表面电势和电场分布解析表达式,给出了SOI的双级和单级RESURF条件统一判据,得到RESURF浓度优化区(DOR,dopingoptimalregion),研究表明该判据和DOR还可用于其他单层或双层漂移区结构.根据此模型,对双级RESURF结构的降场机理和击穿特性进行了研究,并利用二维器件仿真器MEDICI进行了数值仿真.以此为指导成功研制了耐压为560V和720V的双级RESURF高压SOILDMOS.解析解、数值解和实验结果吻合得较好. A new 2D analytical model of the double RESURF effect for the SOI devices is proposed.Based on the 2D Poisson equation,a new analytical description of the surface potential and field distribution is obtained.A new unified criterion of double and single RESURF effects of SOI devices is developed.According to the model and the semiconductor device simulator MEDICI,the electric field reduction mechanism and breakdown characteristics of the p-top layer are discussed,and a RESURF doping optimal region for optimizing the drift region concentration is given.The double REURF SOI LDMOS with 560V and 720V breakdown voltages are manufactured successfully.The numerical simulation and experimental results are shown to support the analytical model.
作者 郭宇锋 方健 张波 李泽宏 李肇基
机构地区 电子科技大学IC设计中心
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第4期764-769,共6页 半导体学报（英文版）
基金 国家自然科学基金资助项目(批准号:60276040)~~
关键词 SOI 双极RESURF 击穿电压 模型 SOI double RESURF breakdown voltage model
分类号 TN386 [电子电信—物理电子学]
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参考文献15

  • 1郭宇锋,李肇基,张波,方健.阶梯分布埋氧层固定电荷SOI高压器件新结构和耐压模型[J].Journal of Semiconductors,2004,25(12):1695-1700. 被引量：14
  • 2Appels J, Collet M, Hart P, et al. Thin layer high voltage devcices (RESURF Devices). Philips J Res,1980,35:1.
  • 3Ludikhuiza A W. A review of RESURF technology. Proceeding of ISPSD, 2000:11.
  • 4李文宏,罗晋生.薄膜SOI RESURF结构击穿电压分析[J].Journal of Semiconductors,2000,21(2):161-168. 被引量：3
  • 5Souza M M D,Narayanan E M S. Double RESURF technolo gy for HVIC. Electron Lett,1996,32(12) :1092.
  • 6Zingg R P,Weijland I,Zwol H V,et al. 850V DMOS-switch in silicon-on-insulator with specific Ron of 13Ω· mm2. Proceeding of International SOI Conference,2000:62.
  • 7He Jin,Zhang Xing, Huang Ru,et al. A novel analytical model for surface electrical field distribution and optimization of TFSOI RESURF devices. Chinese Journal of Semiconductors, 2001,22(4) :402.
  • 8Hardikar S,de Souza M M,Xu Y Z,et al. A novel double RESURF LDMOS for HVIC's. J Microelectron, 2004, 35 (3):305.
  • 9Imam M, Hossain Z, Quddus M,et al. Design and optimization of double-RESURF high-voltage lateral devices for a manufacturable process. IEEE Trans Electron Devices, 2003, 20 (7) :1697.
  • 10Popescu A,Udrea F,Milne W. A numerical study of the RESURF effect in bulk and SOI power devices. Proceeding of CAS, 1997,1:127.

二级参考文献18

  • 1[1]Nakagawa A, Yasuhara N, Baba Y. Breakdown voltage enhancement for devices on thin silicon layer/silicon dioxide film[J]. IEEE Trans Elec Dev,1991; 38(7): 1650-1654.
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  • 9Merchant S,Arnold D,Baumgart H,et al.Realization of high breakdown voltage (＞700V) in thin SOI Devices.Proceeding of ISPSD'91,1991:31
  • 10Wondrak W,Held R.Semiconductor component with embedded fixed charges to provide increased high breakdown voltage.United States Patent,5767548,1998

共引文献15

同被引文献56

引证文献4

二级引证文献6

Journal of Semiconductors
2005年 第4期

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