数字射频存储器用DAC静态参数的表征与测试

Static Performance Characterization and Testing of DAC for Digital Radio Frequency Memory

分析并讨论了应用于相位体制数字射频存储器的DAC静态参数的表征方法.提出用时间非线性(TDNL和TINL)、幅度非线性(ADNL和AINL)以及相位非线性(PNL)来全面描述相位体制DAC的静态性能.仿真结果证明上述静态参数对DAC的频域性能有着显著影响,用它们表征相位体制DAC的静态性能是必要且可行的.采用上述方法对利用标准75mmGaAsMESFET全离子注入工艺流片得到的3bit相位体制DAC进行了低频静态测试,其静态参数优异,性能良好.

This paper analyzes the characterization of DAC’s static performance in detail,which is widely utilized in phase DRFM,using such parameters as time nonlinear parameters (TDNL,TINL),amplitude nonlinear parameters (ADNL,AINL) and phase nonlinear parameter (PNL).Simulation result shows that it is necessary and feasible to use those nonlinear parameters to describe the phase DAC’s static and frequency performances.This method is used to describe the static performance of a GaAs phase DAC fabricated by standard 75mm full ion-implanted GaAs MESFET process.Test results show that this phase DAC’s static performance is excellent.