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1V电源的CMOS能隙电压基准源 被引量:8

A CMOS Bandgap Reference with 1V Supply
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摘要 采用SMIC0.35μmCMOS工艺实现了一种可以工作在1V电源电压下的CMOS能隙基准源.测试表明,该电路可以工作在1~2.5V电源电压下,输出的基准电压可以稳定在约0.446V.在从室温到100℃的范围内,温度系数不超过3.6×10-5/K. A CMOS bandgap reference circuit which can operate at 1V supply is proposed.The proposed circuit is fabricated in SMIC0.35μm CMOS process.The measurament results show that the proposed circuit can generate 0.446V reference voltage in the rangeof1~2.5V supply.The temperature coefficient is less than 3.6×10-5/K from room temperature to 100℃.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第4期826-829,共4页 半导体学报(英文版)
关键词 低压 能隙基准源 CMOS模拟电路 low-voltage bandgap reference CMOS
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参考文献5

  • 1Banba H,Shiga H,Umezawa S,et al. A CMOS bandgap reference circuit with sub-1V operation. IEEE J Solid-State Circuits, 1999,34:670.
  • 2Arora N. MOSFET models for VLSI circuit simulation:Theory and practice. New York: Springer-Verlag, 1993.
  • 3Wu C,Chou C. The design of a CMOS IF bandpass amplifier with low sensitivity to process and temperature variations. Proceedings of IEEE International Symposium on Circuits and Systems, 2001:121.
  • 4Malcovati P,Maloberti F,Fiocchi C,et al. Curvature-compensated BiCMOS bandgap with 1V supply voltage. IEEE J SolidState Circuits, 2001,36:1076.
  • 5Bendali A, Savaria Y. Low-voltage bandgap reference with temperature compensation based on a threshold voltage technique. IEEE International Symposium on Circuits and Systems, 2002,3 : 201.

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