脉冲激光沉积技术制备的薄膜传感器的研究

Investigation of thin film sensor prepared by pulsed laser deposition technique

基于脉冲激光沉积(PLD)技术在光寻址电位传感器(LAPS)表面上制备了Fe-Ge-Sb-Se硫系玻璃薄膜,合成的靶材成分为Fe1.2(Ge28Sb12Se60)98.8,在Si/SiO2基质上的金属层为Cr/Au,硫系玻璃薄膜对Fe3+敏感,显示了良好的重复性和稳定性.在1×10-5～1×10-2mol/L呈现线性,斜率为(56±2)mV/decade,检测下限为5×10mol/L,当浓度高于1×10-4mol/L时,响应时间不超过40 s;当低于此浓度时,响应时间不超过2 min.

Fe-Ge-Sb-Se chalcogenide glass was deposited on the surface of a light-addressable potentiometric sensor (LAPS) by means of pulsed laser beam deposition (PLD) technique. Chalcogenide glass Fe1.2(Ge28 Sb12Se40)98.8 was prepared and used as the target material. An additional contact layer of Cr/Au was deposited onto Si/SiO2 substrate. Chalcogenide glass thin film had high sensitivity towards iron (III) ion and exhibits a good stability, repetition and linear feature with slope of about (56 ± 2) mV/decade in the range of iron (III) concentration 1 × 10--1 × 10-2 mol/L. The detection limit of the thin film sensor was 5 × 10-6 mol/L. The response time does not exceed 40 s for iron (III) ion concentration higher than 1 × 10-4 mol/L, while the iron (III) concentration is lower than the value, the response time is no more than 2 min.