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富硅量不同的富硅氮化硅薄膜的光致发光研究 被引量:8

Photoluminescence Study of Silicon Nitride Films With Different Si rich Degrees
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摘要 采用等离子体增强化学气相沉积方法(PECVD),在低衬底温度下制备了系列富硅量不同的富硅氮化硅薄膜,且所有样品分别经过不同温度的退火。通过X射线光电子能谱(XTP)的测试证实了薄膜中硅团簇的存在。对不同富硅量的氮化硅薄膜做了红外和光致发光的比较研究。由不同富硅量薄膜中硅团簇的尺寸变化对发光峰的影响,得出了发光来源于包埋于氮化硅薄膜中由于量子限制效应而使带隙增大了的硅团簇。 The silicon nitride films with different Si rich degrees were prepared by plasma enhanced chemical vapor deposition (PECVD) technique at low temperature. And all the samples were annealed at diffe rent temperatures. From X ray photoelectron spectroscopy (XPS) experiments, the presence of Si clusters in the silicon nitride films was confirmed. From the influence of the Si clusters size in the films with different Si rich degrees on the photoluminescence peak, it is reasonable that the PL is attributed to the Si clusters with an enlarged band gap due to a quantum confinement effect in the silicon nitride films.
出处 《液晶与显示》 CAS CSCD 北大核心 2005年第2期103-106,共4页 Chinese Journal of Liquid Crystals and Displays
基金 国家自然科学重点基金(No.60336020) "863"高技术项目(No.2001AA31112) 国家自然科学基金(No.60278031 No.60176003 No.60376009) 中国科学院创新工程资助项目
关键词 氮化硅薄膜 光致发光 Si团簇 量子限制效应 silicon nitride films photoluminescence Si clusters quantum confinement effect
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参考文献11

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二级参考文献15

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