摘要
通过对1mm金属/半导体接触孔链样品施加高应力的加速寿命试验和室温下的噪声频谱测量,得到了1/f噪声、10Hz点频功率谱特征及其变化规律。实验中发现应力前后1/f噪声10Hz点频功率谱有明显的变化。对比实验中电阻和噪声的变化,噪声变化量是电阻变化量的1304倍。1/f噪声可以作为金属/半导体接触孔可靠性的灵敏表征参量。
The accelerated-life tests with high stresses and noise spectrum measurement at roomtemperature are performed for one micron contacts between metal and semiconductor. The experimentallaw that the power density at 10Hz and 1/f noise is gotten by bringing high stress to metal andsemiconductor contacts. In the contrast test, it is found that the great change of the power density at10Hz and 1/f noise after the accelerated-life test. The relative change of 1/f noise is about 1304 times largerthan that of resistance by comparing the change of resistance with that of noise. Therefore,1/f noise canbe more sensitive parameters to represent the reliability to metal-semiconductor contacts.
出处
《半导体技术》
CAS
CSCD
北大核心
2005年第5期58-61,共4页
Semiconductor Technology
基金
"十五"国防科技预研项目(41323060204)
