摘要
采用剥离技术,实现了GaN 基紫外探测器件与硅读出电路的倒焊对接,对提高GaN基紫外图像传感器的电学特性起到了重要的作用。介绍了剥离技术的原理,实验结果分析及应用。
By using the stripping technique, the flip-chip bonding between GaN ultraviolet (UV) detectors and Si readout integrated circuits is realized to improve the electrical characteristics of GaN-based UV image sensors. The theory, result analysis and applications of stripping technique are introduced.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2005年第2期115-117,共3页
Semiconductor Optoelectronics