非晶硅太阳电池光照J-V特性的AMPS模拟

AMPS modeling of light J-V characteristics of a-Si based solar cells

运用AMPS(AnalysisofMicroelectronicandPhotonicStructures)模拟分析了TCO p-a-SiC :H i-a-Si:H n-a-Si:H metal结构的异质结非晶硅太阳电池中的p i界面的价带失配以及TCO p ,n metal界面接触势垒对电池光电特性的影响 .分析总结了非晶硅基薄膜太阳电池中J- V曲线异常拐弯现象的种类和可能原因 .

AMPS (Analysis of microelectronic and photonic structures) mode,which was developed by Pennsylvania State University, has been used to module the light J-V characteristics of a-Si solar cells with a structure of TCO/p-a-SiC:H/i-a-Si:H/n-a-Si:H/ metal. The effects of valence band offset and contact barriers at p/i and TOC/p, n/metal interfaces on the light J-V characteristics have been examined. The modeling has qualitatively categorized and explained the non-ideal J-V behaviors (rollover, crossover, Voc shift,and rollunder) observed in a-Si based solar cells.