镶嵌纳米碳粒氧化硅膜的电致发光研究

Study on electroluminescence from C-containing silicon oxide films

采用复合靶磁控共溅射法制备了含纳米碳粒的氧化硅薄膜.测量显示,随着正向偏压的增加,来自Au/含纳米碳粒氧化硅膜/pSi结构的电致发光峰位于650nm处几乎不移动.

C-containing silicon oxide films are deposited by the co-sputtering technique with composite target.Form the Au/C-containing silicon oxide/p-Si structure,EL-band peak locats at around 650 nm,and has no evident shift with increasing forward bias.