摘要
本文利用平行板电极装置及飞行时间质谱仪相结合的方法对四甲基硅进行了多光子电离（ＭＰＩ）光谱及飞行时间（ＴＯＦ）质谱的研究。得到了激光激发波长在３８３～３７３ｎｍ内的多光子电离光谱，获得了某些波长点处的飞行时间质谱，并据此讨论了该分子可能的ＭＰＩ机理。
It was studied that the MPI spectra and the TOF mass spectra of tetramethylsilanewith parallel plate vacuum cell and supersonic molecular beam system with UV laserradiation in the wavelength range of 383￣373 um.In experiments,seven strong peaks ofMPI spectra were gumed but only three were assigned to(2+1)ionization of St atoms.TOF mass spectra showed that Si+ and constantly appeared.A general conclusion wasgumed that the MPI machanism of tetramethylsilane was class B photochemical process.
出处
《中国激光》
EI
CAS
CSCD
北大核心
1994年第1期44-48,共5页
Chinese Journal of Lasers
基金
国家自然科学基金
关键词
四甲基硅
多光子电离
光化学行为
tetramethyisilane
multiphoton ionization
class A photochemical process
class B photochemical process
