摘要
本实验采用脉冲准分子激光沉积（ＰＬＤ）法，在１９３ｎｍ波长，５Ｈｚ频率，４Ｊ／ｃｍ２能量密度条件下，分别在Ｓｉ（１００）和ＳｉＯ２／Ｓｉ衬底上成功地沉积Ｐｂ（Ｚｒ，Ｔｉ）Ｏ３（ＰＺＴ）薄膜，并在不同的条件下对ＰＺＴ薄膜进行退火处理。用ＸＲＤ，ＲＢＳ，ＡＳＲ等方法分别测量了薄膜的结构、组份和厚度。
It is a new technology to combine the laser with the thin film deposition.Lead zirconate titanate(PZT)films were successfully deposited on the Si(100)and SiO2/Si substrates by pulsed eximer laser(λ=193 nm)deposition at 5 Hz,4 J/cm2 and then annealed by RTA at various conditions.The structure, composition and thickness of the films were measured by XRD,RBS and ASR respectively.
出处
《中国激光》
EI
CAS
CSCD
北大核心
1994年第8期631-634,共4页
Chinese Journal of Lasers
关键词
PZT
铁电薄膜
准分子
激光沉积
PZT, pulsed laser deposition(PLD),ferroelectric thin film
