溶液、熔体中负离子配位多面体生长基元的分布与缔合

Distribution and Process of Anionic Coordination-polyhedra Combining in High Temperature Solution or Melt

根据对晶体生长溶液、熔体拉曼光谱的测试结果,剖析了溶液和熔体中负离子配位多面体的分布及其缔合过程,总结出了不同过饱和溶液和不同过冷度熔体中负离子配位多面体生长基元的缔合形式和维度的规律。在靠近晶体的边界层处已出现与晶体结构相同或相似的大维度生长基元。实验表明,生长基元的分布和缔合与溶液过饱和度和熔体过冷度密切相关,从而提出用拉曼光谱进行实时监控,寻找最佳生长物化条件,优化晶体生长边界层的厚度和大维度生长基元的数量,为选择最佳工艺条件提出理论依据。

The distribution and process of anionic coordination-polyhedra combining in high temperature solution or melt were investigated by Raman spectroscopy, and the regulation on the associated forms and dimensions of anionic coordination-polyhedra was summarized. The large size growth units appeared in the vicinity of boundary layer during the crystal growth, and their structures are similar to the structure units among the crystal. It was confirmed by the experiments that the distribution and the process of combining growth units are dominated by supersaturation in the solution or supercooling in the melt. It is suggested that the optimized physicochemical conditions could be acquired by using in situ observation of growth process via Raman spectroscopy in order to optimize the thickness of boundary layer and the concentration of large size growth units.