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立方氮化硼薄膜的气相沉积及过渡层对其附着性能的影响 被引量：3

Vapor Phase Deposition of Cubic Boron Nitride(cBN) Thin Films and Improvement of Its Adhesion by Interlayers
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摘要 本文采用非平衡磁控溅射物理气相沉积工艺,在单晶硅基片上合成了立方氮化硼薄膜,并且通过采用过渡层提高了立方氮化硼薄膜的附着力,过渡层分别是碳化硼(B4C)薄膜以及碳化硼(B4C)薄膜与B C N梯度层的复合层(BC/B C N)。同时,不同过渡层的存在使立方氮化硼薄膜的剥落机理产生变化。 By using unbalanced magnetron sputtering system, cubic boron nitride (cBN) thin films were deposited on c-Si with B4C interlayers and B-C-N gradient layer on top of the B4C interlayer, separately. Interlayers are very helpful for improving the adhesion of cBN on silicon and have much effect on the delamination mechanism of BN thin films.
作者 贺琦 潘俊德 徐重 Russell F.Messier
机构地区 太原理工大学表面工程研究所 MaterialsResearchInstitute
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2005年第2期364-368,共5页 Journal of Synthetic Crystals
关键词 立方氮化硼薄膜 气相沉积法 附着性能 非平衡磁控溅射技术 过渡层 thin films cubic boron nitride unbalanced magnetron sputtering interlayer adhesion
分类号 O484 [理学—固体物理]
  • 相关文献

参考文献10

  • 1Mirkarimi P B, McCarty K F, Medlin D L. Review of Advances in Cubic Boron Nitride Film Synthesis[ J]. Mater. Sci. Eng. , 1997,21 (2): 47-100.
  • 2Sell K, Ulrich S, Nold E, et al. The Constitution and Properties of Cubic Boron Nitride Thin Films: a Comparative Study on the Influence of Bombarding Ion Energy[J].Surf Coat. Technol. , 2003, (174-175): 1121-1125.
  • 3Kim K B, Kim S H. Characterization of Boron Nitride Film Synthesized by Helicon Wave Plasma-assisted Chemical Vapor Deposition[J].Diamond Relat. Mater. , 2000,9( 1 ): 67-72.
  • 4Wilfredo OR, Messier R, Pilione L J, et al. Effect of Al Additions and AlN Interlayers on the Stabilization of cBN Sputtered Thin Films [J].Diamond Relat. Mater. , 2004,13(9): 1690-1696.
  • 5Yap Y K, Aoyama T, Wada Y, et al. Magnetron Sputter Deposition of Cubic Boron Nitride Thin Films [ J ]. Thin Solid Films, 2004, (447-448):131-135.
  • 6Yap Y K, AoyamaT, Wada Y, etal. Growth of Adhesive c-BN Films on a Tensile BN Buffer Layer[ J ] . Diamond Relat. Mater.,2000,9(3-6): 592-595.
  • 7Ikeda T, Satou T, Satoh H. Formation and Characterization of Cubic Boron Nitride Films by an Arc-like Plasma-enhanced Ion Plating Method [J].Surf. Coat. Technol. , 1991,50(1): 33-39.
  • 8Fitz C. Fukarek W. Moller W. Stress Relaxation and Phase Stability of Cubic Boron Nitride Films during Ion Post Implantation and Annealing [J]. Thin Solid Films, 2002,408(1-2): 155-159.
  • 9Sell K, Holleck H, Leiste H, et al. Synthesis and Characterization of Cubic Boron Nitride Films - Investigations of Growth and Annealing Processes[J]. Diamond Relat. Mater., 2002,11(3-6): 1272-1275.
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同被引文献24

  • 1陈光华,朱秀红,邓金祥,刘钧锴,陈浩.高质量宽带隙立方氮化硼薄膜的研究进展[J].物理,2004,33(11):823-825. 被引量：1
  • 2宋志忠,郭永平,张仿清,陈光华.薄膜物理乃其应用讲座第四讲立方氮化硼薄膜的研究现状及其应用前景[J].物理,1995,24(5):307-312. 被引量：11
  • 3张兴旺,游经碧,陈诺夫.立方氮化硼薄膜制备与性质研究新进展[J].无机材料学报,2007,22(3):385-390. 被引量：5
  • 4W Auwarter,M Muntwiler,J Osterwalder,et al.Defect lines and two-domain structure of hexagonal boron nitride films on Ni(111)[J].Surface Science,2003,545:735-740.
  • 5K Sell,S Ulrich,E Nold,et al.The Constitution and Properties of Cubic Boron Nitride Thin Films:a Comparative Study on the Influence of Bombarding Ion Energy[J].Surf Coat Technol,2003,174/175:1121-1125.
  • 6K B Kim,S H Kim.Characterization of Boron Nitride Film Synthesized by Helicon Wave Plasma assisted Chemical Vapor Deposition[J].Diamond Relat Mater,2000,9(1):67-72.
  • 7O R Wilfredo,R Messier,L J Pilione,et al.Effect of Al Additions and AlN Inter layers on the Stabilization of c-BN Sputtered Thin Films[J].Diamond Relat Mater,2004,13(9):1690-1696.
  • 8Y K Yap,T Aoyama,Y Wada,et.al.Magnetron Sputter Deposition of Cubic Boron Nitride Thin Films[J].Thin Solid Films,2004,447/448:131-135.
  • 9Y K Yap,T Aoyama,Y Wada,et al.Growth of Adhesive c-BN Films on a Tensile BN Buffer Layer[J].Diamond Relat Mate,2000,36(9):592-595.
  • 10T Ikeda,T Satou,H Satoh.Formation and Characterization of Cubic Boron Nitride Films by an Arc like Plasma enhanced Ion Plating Method[J].Surf Coat Technol,1991,50(1):33-39.

引证文献3

二级引证文献8

人工晶体学报
2005年 第2期

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