硬质合金CVD金刚石涂层工具衬底前处理技术研究

A Study of Surface Pretreatment Technology on Cemented Carbide Substrates for CVD Diamond Coating

本研究采用KOH:K3 [Fe(CN)6 ]:H2O和H2SO4:H2O2 两种溶液浸蚀硬质合金衬底,分别选择刻蚀WC和Co。并在浸蚀过的硬质合金衬底上,用强电流直流伸展电弧等离子体CVD法沉积金刚石涂层。研究表明,两步混合处理法不仅可以有效的去除硬质合金基体表面的钴,而且,还可显著粗化硬质合金衬底。因此,提高了金刚石薄膜的质量和涂层的附着力。

Two kinds of solutions (KOH:K3[Fe(CN)6]:H2O and H2SO4:H2O2) were utilized to etch the surface WC and Co on the cemented carbide substrates. Diamond films were deposited by means of the high current extended DC arc plasma CVD technique. The results show that the two-step method can effectively remove Co on the cemented carbide substrates and obviously roughen the surface of the cemented carbide substrate. As a result, both the quality and the adhesion of diamond coatings were improved.