晶粒生长过程的蒙特卡罗模拟方法

Monte Carlo Simulation Method in the Growing Process of Crystal Particles

计算机模拟晶粒生长所用的模型及模拟方法大体可分3种:蒙特卡罗(MonteCarlo)方法或改进的蒙特卡罗方法(简称MC法)、使用连续扩散界面场模型以及将细胞状的晶粒结构看作Laguerre棋盘形布局来处理的Laguerre模型。特别是应用于模拟焊接热影响区(HAZ)晶粒长大的二维和三维过程取得了较好结果,但在生长模型的边界处理等方面有待继续完善,特别是晶粒生长与晶化温度、时间、气氛等参数密切相关,这种复杂工艺条件下的晶粒生长过程的模拟,是当前该领域正待解决的难题。

The applied model and the simulated method that computers simulate the growth of crystal particles are divided into 3 kinds: Monte Carlo method or the improved Monte Carlo method (MC method) , the constant - diffusing - interface - ground model and the Laguerre model, for which the cell - typed crystal particles are regarded as the chessboard -typed distribution of Laguerre. They are especially applied to the simulated welding heat affecting zone (HAZ) , in which the two dimensions and the three dimensions that crystal particles become big gain the better result. But, the border treating of the growing model must be perfected continuously. Especially the growth of crystal particles is related to the parameters of the crystal temperature, time, atmosphere and so on. The simulation of the process, in which crystal particles grow under the conditions of complicated technology, is a problem that should be solved in the realm.