摘要
气相合成金刚石膜技术的问世,使制备金刚石电子有源器件成为可能。本文将静高压法合成的大颗粒优质单晶镶嵌在纯铜板中作为基板。以乙炔和氧气为反应气体,将氧气与乙炔的体积比率R(R=O2:C2H2)控制在0.85-1.0 区间。采用大气下火焰法进行了金刚石单晶膜的同质外延实验。并通过拉曼散射,扫描电镜、反射高能电子衍射对实验结果进行了检测分析,在(100)面同质外延的金刚石单晶膜上观察到了螺旋生长的现象。
Diamond Vapor Depositing method makes it possible to produce active electronic elements with diamond. In this paper, experiment of homogeneous epitaxial, growing of single crystal diamond film by flame method in atmosphere was conducted. Pure copper plate implanted with large crystal diamond was used as floor plate, and ethyne and oxygen were used as reaction gas with R ( R = 02: C2H2 ) of 0.85-1.0. Ramman scatter, SEM and reflecting high energy electron diffraction were used to test the obtained diamond film. Spiral growth was observed on the ( 100) face of the above obtained homogeneous epitaxial diamond film.
出处
《金刚石与磨料磨具工程》
CAS
北大核心
2005年第2期14-17,共4页
Diamond & Abrasives Engineering
关键词
金刚石薄膜
火焰法
同质外延
diamond film
flame method
homogeneous epitaxial growing
