摘要
Semiconductor SnO2 nanotube arrays were fabricated by sol-gel method based on highly ordered nanoporous anodic alumina membrane. Their microstruc- tures were characterized by scanning electron microscopy, transmission electron microscopy, selective electron diffrac- tion spectroscopy and X-ray diffraction. Results indicated that SnO2 nanotubes have a thickness of about 20―30 nm, and a diameter of about 100―200 nm. The length of the nanotubes is about 1 μm, XRD and SEDS indicated that these SnO2 nanotubes are polycrystalline.
Semiconductor SnO2 nanotube arrays were fabricated by sol-gel method based on highly ordered nanoporous anodic alumina membrane. Their microstruc- tures were characterized by scanning electron microscopy, transmission electron microscopy, selective electron diffrac- tion spectroscopy and X-ray diffraction. Results indicated that SnO2 nanotubes have a thickness of about 20―30 nm, and a diameter of about 100―200 nm. The length of the nanotubes is about 1 μm, XRD and SEDS indicated that these SnO2 nanotubes are polycrystalline.
基金
supported by the Prophase Project of“973”Plan(Grant No.2002CCC02700)
the National Natural Science Foundation of China(Grant Nos.20371015 and 90306010).
