摘要
采用热丝化学气相沉积(HFCVD)技术,以甲烷(CH4)和硅烷(SiH4)作为源反应气体在Si(111)衬底上生长了晶态SiC薄膜。通过X射线衍射(XRD)、傅立叶红外(FTIR)等分析手段对样品结构、组分进行了分析。通过提高H2稀释度,使得SiC薄膜的质量得到了改善。选取高H2稀释度,利用原子氢在成膜过程中的刻蚀作用稳定结晶相,可在较低的衬底温度下,沿Si(102)择优取向异质生长出晶态SiC薄膜。
Nanocrystalline SiC films have been deposited on Si(111)substrate by hot filament chemical vapor deposition(HFCVD)technique with CH_4 and SiH4 as reaction gases at lower temperature(400℃-500℃).X-ray diffraction(XRD),Fourier Infrared Absorb Spectrum(FTIR)were employed to analyze the structure of the films. From the experiment results, the dilution ratio of H_2 (H_2/H_2+CH_4+SiH_4) is an important factor which effects the crystalline of nanocrystalline SiC thin films deposited by HFCVD method. In terms of the experiment results, H_2 plays a role as etching gas and modulating the crystal phases, so a high H_2 dilution ratio can result in the growing of the high quality nanocrystalline SiC thin films following the Si (102) phase chose good orients under a low substrate temperature.
出处
《长春理工大学学报（自然科学版）》
2005年第1期90-92,共3页
Journal of Changchun University of Science and Technology(Natural Science Edition)
基金
国家重点基础研究发展计划(2003CB314701)
关键词
碳化硅
H2稀释变
热丝CVD
nanocrustalline SiC
H_2 dilution ratio (H_2/ H_2+CH_4+SiH_4)
HFCVD
