关于GCNMOS的ESD保护电路的HBM的分析测试

The Analyse and Test of HBM of ESD Protection Circuit Based on GCNMOS

静电放电(electrostaticdischarge,ESD)是造成大多数的集成电路(integratedcircuits,ICs)或电子系统受到过度电性应力(electricaloverstress,EOS)破坏的主要原因。而HBM(humanbobymodel)是ESD破坏IC的最常见的一种方式.因此要在IC中加入相关的保护电路.对一种GCNMOS(gate-coupleNMOS)的保护电路进行详细的分析与测试.

ESD is the major reason that results in failure of many Integrated Circuits and Electronic System influenced by Electrical Overstress. So protection circuit is necessary to IC. The paper analyses and tests protection circuit of GCNMOS.