激光二极管侧抽运Nd∶YLF多程放大实验研究

Experimental Study of Diode Side-Pumped Nd∶YLF Multi-Pass Amplification

进行了激光二极管侧抽运Nd∶YLF多程放大实验研究。设计了高增益的激光二极管侧抽运Nd∶YLF放大腔,通过对放大器的优化设计避免了自激的出现。放大器工作波长为1053nm,工作物质为c轴Nd∶YLF,重复频率1Hz,采用单个放大腔四程放大的光路结构,放大腔总抽运功率为1.8kW,激光二极管的中心波长为797nm,放大腔中激光二极管采用环状密耦合的方式,实现了高效抽运。种子激光能量为0.1μJ,脉宽为7.5ns,M2≤1.1,稳定性为±8%。放大器输出能量为2.9mJ,脉宽为6.7ns,M2平均为1.65,稳定性为±6.9%,总增益为2.9×104倍。

The experiment of diode side-pumped Nd:YLF multi-pass amplification was studied. The high gain amplifying cavity of diode side-pumped Nd:YLF was designed optimally, to avoid the self-emission of amplifier. In the amplifier laser wavelength was 1053 nm, laser material was c-axis Nd:YLF, repetition rate was 1 Hz, four-pass structure was used, the total pumped power of amplifier was 1.8 kW, the central wavelength of diode was 797 nm, in the amplified cavity the diode was arranged compactly, and the high pumped efficiency was obtained. In the amplifier the seeder was 0.1 μJ, 6.5 ns, M2 &le 1.1 and stability was ± 8%, the output was 2.9 mJ, 5.2 ns, mean of M2 was 1.65, stability was ± 6.9%, total gain was 2.9 × 104.