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隔离电阻对集成光源特性的影响分析 被引量:1

Dependence of the Characteristics of the Integrated Laser-modulator on the Isolation Resistance
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摘要 提出了一种分布反馈(DFB)激光器与电吸收(EA)调制器集成光源(EML)的等效电路模型。该模型考虑了由于隔离电阻不够大而导致的激光器与调制器之间的电耦合,通过对电路模型进行仿真可以看出,对于不同隔离电阻的EML,激光器的阈值电流、调制器的频率响应带宽、集成器件的小信号调制和脉冲调制等多方面特性均有明显不同。分析得到,EML的隔离电阻阻值只有达到10 kΩ量级,才能够忽略电泄漏对器件特性的影响。并指出EML在更高的偏置下,将对隔离电阻提出更高的要求。 A circuit model of an integrated laser-modulator (EML) was presented. Electrical interactions between the distributed feedback (DFB) laser and the electroabsorption (EA) modulator are taken into account in this model. The simulation is focused on the dependence of the characteristics of the integrated laser-modulator on the isolation resistance between the DFB laser and EA modulator. Great differences for the characteristics of the integrated light sources with different isolation resistances were shown in the simulations. An isolation resistance of 10 kΩ is required by the integrated device researched. The optimal design for the isolation resistance at different bias had been discussed.
出处 《光电子.激光》 EI CAS CSCD 北大核心 2005年第5期519-522,共4页 Journal of Optoelectronics·Laser
基金 国家"863"计划重大资助项目(2001AA312030 2001AA312290) 国家"973"课题资助项目(G2000036601) 国家杰出青年基金资助项目(69825109)
关键词 隔离电阻 光源特性 等效电路模型 调制器 激光器 EML 集成光源 分布反馈 阈值电流 频率响应 脉冲调制 信号调制 集成器件 电阻阻值 器件特性 电吸收 电耦合 偏置 Computer simulation Distributed feedback lasers Equivalent circuits Integrated circuits Optical properties
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参考文献15

  • 1Ishzaka M,Yamaguchi M,Sakata Y,et al.Modulator integrated DFB lasers with more than 600-km transmission capability at 2.5 Gb/s[J].IEEE Photonic Technology Letters,1997,10:1406-1408.
  • 2Luo Y,Wen G P,Sun C Z,et al.2.5 Gb/s electroabsorption modulator integrated with partially gain-coupled distributed feedback laser fabricated using a very simpel device structure[J].Jpn J Appl Phys,1999,5A:524-526.
  • 3LI Zhi-yong,DING Yong-kui,NI Wen-jun,et al.Experimental study on generation of ultrashort optical pulses from electroabsorption modulation lasers[J].(光电子·激光),2004,15(1):13-17.(in Chinese)
  • 4Aoki M,Suzuki M,Sano H,et al.InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by bend-gap energy control selective area MOCVD[J].IEEE J Quantum Electronics,1993,6:2088-2096.
  • 5Brosson P,Bissessur H.Analytical expressions for the FM and AM response of an integrated laser-modulator[J].IEEE Journal of Selective Topics in Quantum Electronics,1996,2:336-340.
  • 6Suzuki M,Tanaka H,Akiba A,et al.Electrical and optical interactions between integrated InGaAsP/InP DFB lasers and electroabsorption modulators[J].Journal of Lightwave Technology,1988,6:779-785.
  • 7Kawamura Y,Wakita K,Yoshikuni Y,et al.Monolithic integration of a DFB laser and an MQW optical modulator in the 1.5 μm wavelength range[J].IEEE Journal of Quantum Electronics,1987,23:915-918.
  • 8Yamaguchi M, Kato T, Sasaki T, et al.Requirements formodulator-integrated DFB LDs for penalty-free 2.5 Gb/s transmission[J].IEEE J Lightwave Technology,1995,10:1948-1954.
  • 9CHEN Wei-you,LIU Shi-yong.Circuit model for absorption grating gain-coupled distributed feedback semiconductor lasers[J].(光电子·激光),1999,10(1):9-13.(in Chinese)
  • 10WU Shu,LIN Shi-ming,LIU Wen-kai.An equivalent circuit model of a metal-semiconductor-metal photodetector[J].光电子·激光,2001,12:552-555.(in Chinese)

同被引文献8

  • 1Cheng Yuan Bing, Pan Jiao Qing, Wang Yang, et al. 40-Gb/s Low Chirp Electroabsorption Modulator Integrated with DFB Laser, I EEE Photonics Technology Letters, 2009,21 (6): 356- 358.
  • 2Deshours F,Billabert A,Algani C,et al. A 40 Gbps electro-absorption modulator integrated laser modeling method for optical transmitter in ultra-wide band radio-over-fiber systems[J]. International Journal of Microwave and Wireless Technologies, 2009,1:511-519.
  • 3Lim C G. Electro-absorption modulator integrated lasers with enhanced signal injection efficiency[J].Journal of Lightwave Technology ,2008,26(6) :685-691.
  • 4Takeuchi H, Tsuzuki K, Sato K, et al. Very high-speed lightsource up to 40 Gb/s containing an MQW electroabsorption modulator integrated with a DFB laser[J]. IEEE J Sel. Topics Quantum Electron, 1997,3(2) :336-343.
  • 5Aoki M,Suzuki M,Sano H,et al. InGaAs/ InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD[J]. IEEE J Quantum Electron, 1993,29(6 ) : 2088-2096.
  • 6Stegmuller B, Baur E, Kicher M. 15 GHz modulation performance of integrated a DFB laser diode EA modulator with identical multiple-quantum-well double-stack active layer [J]. IEEE Photonics Technology Letters, 2002,14(12) : 1647-1649.
  • 7李智勇,丁永奎,倪文俊,李世忱.电吸收调制激光器产生短光脉冲的实验研究[J].光电子.激光,2004,15(1):13-17. 被引量:6
  • 8胡小华,李宝霞,朱洪亮,王宝军,赵玲娟,王鲁峰,王圩.Monolithic Integration of Electro-Absorption Modulators and DFB Lasers by Modified Double Stack Active Layer Approach[J].Journal of Semiconductors,2004,25(5):481-485. 被引量:2

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