无水化学沉积法制备Sb_2S_3薄膜

Sb_2S_3 Thin Films Prepared with Non-aqueous Chemical Bath Deposition

采用无水化学沉积(NCBD)法在玻璃基片上制备了Sb2S3薄膜.先用无水乙醇将4.0 mL浓度为0.1 mol/L的SbCl3乙醇溶液稀释至39.6 mL,再加入0.4 mL浓度为0.5 mol/L的CH3CSNH2乙醇溶液,搅拌均匀后垂直放入玻璃基片,在15～18 ℃温度下沉积72 h后,进行退火处理.利用X射线衍射(XRD)和扫描电子显微镜(SEM)对薄膜在退火前后的结构特性进行了研究,利用光学测试计算了薄膜的光学带隙.结果表明,高温退火使薄膜由退火前的非晶态转变为多晶的Sb2S3结构(正交晶系),薄膜的直接光学带隙从1.86 eV降低为1.75 eV.

Sulfide (Sb2S3) thin films were deposited on glass substrates with nonaqueous chemical bath deposition (NCBD) method. First, 4.0 mL 0.1 mol/L SbCI3 alcoholic solution was diluted to 39.6 mL with alcoholic, and then, 0.4 mL 0.5 mol/L CH3CSNH2 alcoholic solution was added. After the solution was stirred homogeneous, the cleaned substrate was then clamped vertically into the solution to deposit 72 h under the temperature of 15°C-18°C. At last, the sample was annealed. Structure for properties of the films were measured using X-ray diffraction (XRD) and scanning electron microscopy (SEM) in the deposited and annealed states. Optical band gap was determined using optical transmission and reflection spectrum measurements. The result shows that the annealing under high temperature makes the film's structure change from amorphous to polycrystalline orthorhombic Sb2S3, and its direct optical band gap decreases from 1.86 eV to 1.75 eV.